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R1EX24004AxxS0A
Page Write:
The EEPROM is capable of the page write operation which allows any number of bytes up to 16 bytes to
be written in a single write cycle. The page write is the same sequence as the byte write except for
inputting the more write data. The page write is initiated by a start condition, device address word,
memory address(n) and write data (Dn) with every ninth bit acknowledgment. The EEPROM enters the
page write operation if the EEPROM receives more write data (Dn+1) instead of receiving a stop
condition. The a0 to a3 address bits are automatically incremented upon receiving write data (Dn+1).
The EEPROM can continue to receive write data up to 16 bytes. If the a0 to a3 address bits reaches the
last address of the page, the a0 to a3 address bits will roll over to the first address of the same page and
previous write data will be overwritten. Upon receiving a stop condition, the EEPROM stops receiving
write data and enters internally-timed write cycle.
Page Write Operation
WP
Device
Memory
4k
address
1010
W
address (n)
Write data (n)
Write data (n+m)
Start
ACK
R/W
ACK
ACK
ACK
Stop
REJ03C0353-0101 Rev.1.01 Jan. 9, 2009
Page 13 of 22
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